- 您现在的位置：买卖IC网 > Sheet目录447 > IRFSL41N15D (International Rectifier)MOSFET N-CH 150V 41A TO-262
IRFB/IRFIB/IRFS/IRFSL41N15D
Static @ T J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V (BR)DSS
Drain-to-Source Breakdown Voltage
150
–––
–––
V
V GS = 0V, I D = 250μA
? V (BR)DSS / ? T J
Breakdown Voltage Temp. Coefficient
–––
0.17
–––
V/°C Reference to 25°C, I D = 1mA
R DS(on)
V GS(th)
I DSS
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
–––
3.0
–––
–––
–––
–––
0.045
5.5
25
?
V
μA
V GS = 10V, I D = 25A
V DS = V GS , I D = 250μA
V DS = 150V, V GS = 0V
–––
–––
250
V DS = 120V, V GS = 0V, T J = 150°C
I GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
–––
–––
100
-100
nA
V GS = 30V
V GS = -30V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
C iss
C oss
C rss
C oss
C oss
C oss eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
18
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
72
21
35
16
63
25
14
2520
510
110
3090
230
250
–––
110
31
52
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
nC
ns
pF
V DS = 50V, I D = 25A
I D = 25A
V DS = 120V
V GS = 10V
V DD = 75V
I D = 25A
R G = 2.5 ?
V GS = 10V
V GS = 0V
V DS = 25V
? = 1.0MHz
V GS = 0V, V DS = 1.0V, ? = 1.0MHz
V GS = 0V, V DS = 120V, ? = 1.0MHz
V GS = 0V, V DS = 0V to 120V
Avalanche Characteristics
Parameter
Typ.
Max.
Units
E AS
I AR
E AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
–––
–––
–––
470
25
20
mJ
A
mJ
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
Continuous Source Current
–––
–––
41
MOSFET symbol
D
(Body Diode)
A
showing the
I SM
Pulsed Source Current
–––
–––
164
integral reverse
G
(Body Diode)
p-n junction diode.
S
V SD
t rr
Q rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
170
1.3
1.3
260
1.9
V
ns
μC
T J = 25°C, I S = 25A, V GS = 0V
T J = 25°C, I F = 25A
di/dt = 100A/μs
t on
2
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
www.irf.com
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
IRFSL59N10D
MOSFET N-CH 100V 59A TO-262
IRFSL9N60ATRR
MOSFET N-CH 600V 9.2A TO-262
IRFU214BTU_FP001
MOSFET N-CH 250V 2.2A IPAK
IRFU540ZPBF
MOSFET N-CH 100V 35A IPAK
IRFW630BTM_FP001
MOSFET N-CH 200V 9A D2PAK
IRFZ14STRR
MOSFET N-CH 60V 10A D2PAK
IRFZ24NSTRR
MOSFET N-CH 55V 17A D2PAK
IRFZ24STRRPBF
MOSFET N-CH 60V 17A D2PAK
相关代理商/技术参数
IRFSL41N15DPBF
制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET Power MOSFET
IRFSL4227PBF
功能描述:MOSFET MOSFT 200V 65A 26mOhm 70nC
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFSL4228PBF
功能描述:MOSFET MOSFT 150V 83A 15mOhm 72nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFSL4229PBF
功能描述:MOSFET MOSFT 250V 45A 48mOhm 72nC
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFSL42N20D
制造商:IRF 制造商全称:International Rectifier 功能描述:High frequency DC-DC converters
IRFSL4310
制造商:International Rectifier 功能描述:MOSFET, 100V, 140A, 7 mOhm, 170 nC Qg, TO-262
IRFSL4310PBF
功能描述:MOSFET MOSFT 100V 140A 7mOhm 170nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFSL4310ZPBF
功能描述:MOSFET MOSFT 100V 127A 6mOhm 120nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube